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MG600J2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600J2YS60A(600V/600A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.1 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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2002-09-06
MG600J2YS60A
Package Dimensions: 2-123C1B
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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MG600J2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol 3/4 Rating 600 20 600 A 1200 600 A 1200 2770 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 600 A VCC = 300 V, IC = 600 A VGE = 15 V, RG = 5.1 W (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 600 mA VGE = 15 V, IC = 600 A Tj = 25C Tj = 125C Min 3/4 3/4 3/4 5.0 3/4 3/4 3/4 0.10 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 6.5 2.1 3/4 5000 3/4 3/4 3/4 3/4 2.1 Max +3/-4 100 1.0 8.0 2.4 V 2.6 3/4 1.00 2.00 0.50 0.50 2.4 V ms pF Unit mA nA mA V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V 3/4 VCC = 300 V, VGE = 15 V Min 720 100 3/4 Typ. 3/4 3/4 3/4 Max 3/4 125 6.5 Unit A C ms
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MG600J2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.045 0.068 3/4 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG600J2YS60A
Remark

l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. * VCC < 375 V = < * 13.8 V = VGE < 16.0 V = > 5.1 W * RG = * Tj < 50C =

l To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.

l For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail.
VCE (sat) 18 20 22 24 VF B C D E Min 1.5 1.7 1.9 2.1 Max 1.8 2.0 2.2 2.4
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MG600J2YS60A
IC - VCE
600 Common emitter Tj = 25C 500 500 12 V 600 Common emitter Tj = 125C
IC - VCE
12 V 15 V 10 V 9V
(A)
VGE = 20 V 400 10 V
(A)
15 V
VGE = 20 V 400
IC
Collector current
300
Collector current
IC
300 8V 200
200 9V 100 8V 0 0 1 2 3 4 5
100
0 0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6
4 IC = 900 A 2 300 A 600 A 0 0 5 10 15 20
4 IC = 900 A 2 300 A 600 A 0 0 5 10 15 20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 1000 Tj = -40C 10 Common emitter VCE = 5 V 800
IC - VGE
(V)
VCE
(A)
25C 600
Collector-emitter voltage
6
Collector current
IC
8
Tj = 125C 400
4
IC = 900 A
2 300 A 0 0 5 10 15 600 A 20
200 -40C
0 0
4
8
12
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
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MG600J2YS60A
IF - VF
600 Common cathode 500 VGE = 0 V 500 Common emitter RL = 0.5 W Tj = 25C
VCE, VGE - QG
20
(V)
VCE
400
16
(A)
Forward current IF
400
Tj = 25C
Collector-emitter voltage
300
12
300 125C 200 -40C
200
8
100
100
4
0 0
0.5
1
1.5
2
2.5
0 0
1000
2000
3000
4000
5000
0 6000
Forward voltage
VF
(V)
Charge
QG
(nC)
SW time - RG
10000 Common emitter, VCC = 300 V IC = 600 A Tj = 25C VGE = 15 V Tj = 125C toff 1000
Eon, Eoff - RG
(mJ)
Eon
(ns)
SW time
td (off) 1000 ton td (on) tr
SW loss Eon, Eoff
100 Eoff Common emitter VCC = 300 V IC = 600 A VGE = 15 V 10 0 Tj = 25C Tj = 125C 15 20 25
tf 100 0 5 10 15 20 25 5
10
Gate resistance RG
(9)
Gate resistance RG
(9)
SW time - IC
10000 Common emitter, VCC = 300 V RG = 5.1 W VGE = 15 V toff Tj = 25C Tj = 125C 100
Eon, Eoff - IC
Eoff
(mJ)
Eon
(ns)
1000 ton
SW loss Eon, Eoff
SW time
td (off)
10
td (on) tf tr
Common emitter VCC = 300 V RG = 5.1 W VGE = 15 V 1 0 Tj = 25C Tj = 125C 400 500 600
100 0
100
200
300
400
500
600
100
200
300
Collector current
IC
(A)
Collector current
IC
(A)
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2002-09-06
Gate-emitter voltage VGE
(V)
MG600J2YS60A
Irr, trr - IF
1000 100
Edsw - IF
(mJ) Reverse recovery loss Edsw
10
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
trr
100
1
Irr
10 0
100
200
300
400
500
600
0.1 0
200
400
600
Forward current
IF
(A)
Forward current
IF
(A)
C - VCE
1000000
Cies 100000
Capacitance C
(pF)
10000 Coes 1000 Cres 100 0.01
0.1
1
10
100
1000
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
10000
Rth - tw
1
(A)
1000
Tc = 25C
IC
Collector current
(C/W)
Diode stage 0.1
100
Rth (j-c)
Transistor stage 0.01
10
Tj < 125C = RG = 5.1 W VGE = 15 V
1 0
200
400
600
0.001 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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MG600J2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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